FDD7N20 mosfet equivalent, mosfet.
* RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A
* Low gate charge( Typ. 5nC )
* Low Crss ( Typ. 5pF )
* Fast switching
* 100% avalanche tested
*.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especically tailored to minimize on-state resistance, provide superior switc.
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